DMC4047LSD document number: ds36206 rev. 4 - 2 1 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d t a = +25c q2 40v 24m ? @ v gs = 10v 6.9a 32m ? @ v gs = 4.5v 6.0a q1 -40v 45m ? @ v gs = -10v -5.1a 55m ? @ v gs = -4.5v -4.5a description this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. applications ? dc-dc converters ? power management functions ? backlighting features and benefits ? low input capacitance ? low on-resistance ? fast switching speed ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: so-8 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe solderable per mil-std-202, method 208 ? weight: 0.074 grams (approximate) ordering information (note 4) part number case packaging DMC4047LSD-13 so-8 2,500/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html. marking information top view s2 d1 s1 d2 g1 g2 d2 d1 top view internal schematic e3 n-channel mosfet p-channel mosfet d 2 s2 g2 d 1 s1 g 1 1 4 8 5 c4047sd ww yy 1 4 8 5 c4047sd ww yy = man ufacturer?s marking c4047sd = product type marking code yyww = date code marking yy o r yy = year (ex: 13 = 2013) ww = week (01 - 53) yy = date co d e markin g fo r sat (sh an ghai assembly/ test site) yy = date code marking for cat (chengdu assembly/ test site) chengdu a/t site shanghai a/t site
DMC4047LSD document number: ds36206 rev. 4 - 2 2 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol v alue_q2 v alue_q1 units drain-source voltage v dss 40 -40 v gate-source voltage v gss 20 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 7.0 5.6 -5.1 -4.1 a t<10s t a = +25c t a = +70c i d 9.0 7.2 -6.5 -5.2 a maximum body diode forward current (note 6) i s 2.5 -2.5 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 70 -40 a avalanche current (notes 7) l = 0.1mh i ar 20 20 a repetitive avalanche energy (notes 7) l = 0.1mh e ar 20 20 mj thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol v alue units total power dissipation (note 5) t a = +25c p d 1.3 w t a = +70c 0.8 thermal resistance, junction to ambient (note 5) steady state r ? ja 98 c/w t<10s 59 total power dissipation (note 6) t a = +25c p d 1.8 w t a = +70c 1.1 thermal resistance, junction to ambient (note 6) steady state r ja 71 c/w t<10s 43 thermal resistance, junction to case (note 6) r jc 11.8 operating and storage temperature range t j, t stg -55 to +150 c electrical character istics n-channel q2 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 40 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ?? ?? 1 a v ds = 40v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) 1.4 ? 2.4 v v ds = v gs , i d = 250a static drain-source on-resistance r ds(on) ? 15 24 m ? v gs = 10v, i d = 6a ? 20 32 v gs = 4.5v, i d = 5a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 1.0a dynamic characteristics (note 9) input capacitance c iss ? 1060 ? pf v ds = 20v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 84 ? reverse transfer capacitance c rss ? 58 ? gate resistance r g ?? 1.6 ?? ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g ? 8.8 ? nc ? v ds = 20v, i d = 8a total gate charge (v gs = 10v) q g ?? 19.1 ?? gate-source charge q gs ? 3.0 ? gate-drain charge q gd ? 2.5 ? turn-on delay time t d(on) ? 5.3 ? ns v dd = 25v, r l = 2.5 ? v gs = 10v, r g = 3 ? turn-on rise time t r ? 7.1 ? turn-off delay time t d(off) ? 15.1 ? turn-off fall time t f ?? 4.8 ?? body diode reverse recovery time t rr ?? 10.5 ?? ns i f = 8a, di/dt = 100a/ s body diode reverse recovery charge q rr ?? 4.15 ?? nc i f = 8a, di/dt = 100a/ s
DMC4047LSD document number: ds36206 rev. 4 - 2 3 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD electrical character istics p-channel q1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -40 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ?? ?? -1 a v ds = -40v, v gs = 0v gate-source leakage i gss ? ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -1.0 ? -2.2 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 33 45 m ? v gs = -10v, i d = -5a ? 40 55 v gs = -4.5v, i d = -4a diode forward voltage v sd ? -0.7 -1.0 v v gs = 0v, i s = -1.0a dynamic characteristics (note 9) input capacitance c iss ? 1154 ? pf v ds = -20v, v gs = 0v f = 1.0mhz output capacitance c oss ? 84 ? reverse transfer capacitance c rss ? 66 ? gate resistance r g ?? 12.6 ?? ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g ? 10.6 ? nc ? v ds = -20v, i d = -4.9a total gate charge (v gs = -10v) q g ?? 21.5 ?? gate-source charge q gs ? 2.2 ? gate-drain charge q gd ? 3.3 ? turn-on delay time t d(on) ? 8.7 ? ns v ds = -20v, i d = -3.9a v gs = -4.5v, r g = 1 ? turn-on rise time t r ? 19.6 ? turn-off delay time t d(off) ? 34.9 ? turn-off fall time t f ?? 25.5 ?? body diode reverse recovery time t rr ?? 9.61 ?? ns i s = -3.9a, di/dt = 100a/ s body diode reverse recovery charge q rr ?? 3.30 ?? nc i s = -3.9a, di/dt = 100a/ s notes: 5. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. iar and ear rating are based on low frequency and duty cycles to keep tj = +25c 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing.
DMC4047LSD document number: ds36206 rev. 4 - 2 4 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD n-channel q2 0.0 5.0 10.0 15.0 20.0 01 2 3 45 v , drain-source voltage(v) ds figure 1 typical output characteristics i, d r ai n c u r r e n t (a) d v = 4.0v gs v = 3.5v gs v = 4.5v gs v = 3.0v gs v = 2.5v gs v = 5.0v gs v = 10v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ain c u r r en t (a) d v = 125 gs c v = 85 gs c v = 25 gs c v = -55 gs c v = 150 gs c 0 5 10 15 20 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = 10.0v gs v = 4.5v gs 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 0 5 10 15 20 25 30 i , drain current(a) d figure 4 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- ds(on) r esistance ( ) ? t= -55 a c t= 125 a c t = 150 a c t= 85 a c t= 25 a c 0 0.5 1 1.5 2 t , junction temperature (c) j figure 5 on-resistance variation with temperature r , d r ai n -s o u r c e on-resistance (normalized) ds(on) v = 4.5v i = 5.0a gs d v = 10v i = 10a gs d 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j figure 6 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? v = 4.5v i = 5.0a gs d v = 10v i = 10a gs d
DMC4047LSD document number: ds36206 rev. 4 - 2 5 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD t , ambient temperature (c) figure 7 gate theshold variation vs ambient temperature a 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50-25 0 25 50 75100125150 v, g a t e t h es h o ld v o l t a g e (v) gs(th) i=1ma d i =250a d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i, s o u r c e c u r r e n t (a) s t = -55c a t = 25c a t = 150c a t = 85c a
DMC4047LSD document number: ds36206 rev. 4 - 2 6 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD p-channel q1 -v , drain -source voltage (v) figure 9 typical output characteristics ds -i , d r ai n c u r r e n t (a) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 012345 v = -3.0v gs v = -3.5v gs v = -4.0v gs v = -4.5v gs v= -10v gs v = -5.0v gs v = -2.0v gs v = -2.5v gs -v , gate-source voltage (v) gs figure 10 typical transfer characteristics -i , d r ai n c u r r e n t (a) d 0 5 10 15 20 25 30 t = 150 c a ? t = 125 c a ? t = 85c a ? t = 25c a ? t = -55c a ? v = -5.0v ds -i , drain source current (a) figure 11 typical on-resistance vs. drain current and gate voltage d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 5 10 15 20 v = -4.5v gs v = -10v gs v = -2.5v gs -i , drain source current (a) figure 12 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 5 10 15 20 25 30 t = -55c a ? t = 25c a ? t = 85c a ? t = 125c a ? t = 150c a ? v = -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 13 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) 2 v = -4.5v i = -5a gs d v = -10v i = -10a gs d 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 14 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 v= -10v i= a gs d -10 v=5v i= a gs d -4. -5
DMC4047LSD document number: ds36206 rev. 4 - 2 7 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 15 gate threshold variation vs. ambient temperature a v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -i = 1ma d -i = 250a d -v , source-drain voltage (v) figure 16 diode forward voltage vs. current sd -i , s o u r c e c u r r e n t (a) s 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t= 25c a ? 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) figure 17 transient thermal resistance d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 94c/w duty cycle, d = t1/ t2 ?? ? ja ja ja
DMC4047LSD document number: ds36206 rev. 4 - 2 8 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. so-8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ?? 0 ? 8 ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 gauge plane seating plane detail ?a? detail ?a? e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0.254 x c1 c2 y
DMC4047LSD document number: ds36206 rev. 4 - 2 9 of 9 www.diodes.com november 2013 ? diodes incorporated DMC4047LSD important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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